Design continues mode inverse class-f power amplifier

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dc.contributor.authorAtilla, Doğu Çağdaş
dc.contributor.authorAlsaedi, Mustafa Oudah Hani
dc.contributor.authorAlsaadi, Hajir Adil Jasim
dc.date.accessioned2024-07-21T08:03:51Z
dc.date.available2024-07-21T08:03:51Z
dc.date.issued2023en_US
dc.departmentEnstitüler, Lisansüstü Eğitim Enstitüsü, Elektrik ve Bilgisayar Mühendisliği Ana Bilim Dalıen_US
dc.description.abstractThis paper outlines the design, simulation, and testing of a continuous mode inverse class-F (CMICF) power amplifier (PA) specifically optimized for GSM applications. The comprehensive design methodology encompasses DC analysis, optimum load impedance calculation, stability circuit analysis, and input and output matching circuit design. The amplifier is built using Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT), and it introduces a novel technique for designing the output matching network (OMN). This technique involves extracting parasitic elements from the power device using a tuning method and employs a graphical approach with the Smith chart utility to obtain the second and third harmonics of the output signal. The resulting design achieves high efficiency with a reduced component count, simplifying the overall design process and reducing costs. The design work was facilitated using Keysight ADS software. Operating in the frequency range of 1.5 GHz to 2 GHz, the amplifier demonstrates a maximum output power of approximately 40 dBm and a power gain of 16 dB, with a power-added efficiency exceeding 70%.en_US
dc.identifier.citationAtilla, D. Ç., Alsaedi, M. O. H., Alsaadi, H. A. J. (2023). Design continues mode inverse class-f power amplifier. 9th International Conference on Engineering and Emerging Technology, ICEET 2023. 10.1109/ICEET60227.2023.10525766en_US
dc.identifier.isbn9798350316926
dc.identifier.scopus2-s2.0-85194041319
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://hdl.handle.net/20.500.12939/4777
dc.indekslendigikaynakScopus
dc.institutionauthorAtilla, Doğu Çağdaş
dc.institutionauthorAlsaedi, Mustafa Oudah Hani
dc.institutionauthorAlsaadi, Hajir Adil Jasim
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartof9th International Conference on Engineering and Emerging Technology, ICEET 2023
dc.relation.isversionof10.1109/ICEET60227.2023.10525766en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - İdari Personel ve Öğrencien_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectADSen_US
dc.subjectClass-fen_US
dc.subjectCMICFen_US
dc.subjectPAen_US
dc.subjectParasitic elementsen_US
dc.titleDesign continues mode inverse class-f power amplifier
dc.typeConference Object

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